JPH0534832B2 - - Google Patents

Info

Publication number
JPH0534832B2
JPH0534832B2 JP57094197A JP9419782A JPH0534832B2 JP H0534832 B2 JPH0534832 B2 JP H0534832B2 JP 57094197 A JP57094197 A JP 57094197A JP 9419782 A JP9419782 A JP 9419782A JP H0534832 B2 JPH0534832 B2 JP H0534832B2
Authority
JP
Japan
Prior art keywords
transistor
conductivity type
region
gate electrode
basic cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57094197A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58210660A (ja
Inventor
Masao Mizuno
Shinya Kusaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP57094197A priority Critical patent/JPS58210660A/ja
Publication of JPS58210660A publication Critical patent/JPS58210660A/ja
Publication of JPH0534832B2 publication Critical patent/JPH0534832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57094197A 1982-06-01 1982-06-01 半導体装置 Granted JPS58210660A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57094197A JPS58210660A (ja) 1982-06-01 1982-06-01 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57094197A JPS58210660A (ja) 1982-06-01 1982-06-01 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP3224774A Division JPH0824176B2 (ja) 1991-08-09 1991-08-09 半導体装置
JP4328589A Division JPH0824177B2 (ja) 1992-11-13 1992-11-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS58210660A JPS58210660A (ja) 1983-12-07
JPH0534832B2 true JPH0534832B2 (en]) 1993-05-25

Family

ID=14103568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57094197A Granted JPS58210660A (ja) 1982-06-01 1982-06-01 半導体装置

Country Status (1)

Country Link
JP (1) JPS58210660A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0828480B2 (ja) * 1983-09-30 1996-03-21 富士通株式会社 半導体集積回路装置
JPH0828482B2 (ja) * 1984-10-22 1996-03-21 富士通株式会社 ゲ−トアレイマスタスライス集積回路装置におけるクリツプ方法
JPS61123153A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd ゲ−トアレイｌｓｉ装置
JPH0744229B2 (ja) * 1985-03-19 1995-05-15 株式会社東芝 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211872A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor device
JPS5843905B2 (ja) * 1979-07-31 1983-09-29 富士通株式会社 半導体集積回路の製造方法
JPS56148861A (en) * 1980-04-18 1981-11-18 Fujitsu Ltd Field effect semiconductor device

Also Published As

Publication number Publication date
JPS58210660A (ja) 1983-12-07

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